Beilstein J. Nanotechnol.2019,10, 322–331, doi:10.3762/bjnano.10.31
illumination conditions, by exciting resonances inside the absorber layer. However, passivation of nanowires is critical to further improve the efficiency of such devices.
Keywords: heterojunction; nanowires; opticalmodelling; photovoltaics; silicon; Introduction
The implementation of effective and low-cost
%, ensuring the feasibility of our proposed device architecture. In the second part, a geometrical study of the nanowire array is carried out, using rigorous opticalmodelling. An ultra-thin c-Si absorber is employed, to focus the analysis on the effect of nanowires on the propagation of light inside the
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Figure 1:
Scanning electron microscopy pictures of (a) bare and (b) coated nanowires on the c-Si substrate. I...
Beilstein J. Nanotechnol.2014,5, 895–902, doi:10.3762/bjnano.5.102
transport property with an increase in TNT length. The initial charge generation rate was improved from 4 × 1021 s−1·cm−3 to 7 × 1021 s−1·cm−3 in DSSCs based on opticalmodelling analysis. The modelling analysis of optical processes inside TNT-based DSSCs using generalized transfer matrix method (GTMM
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Figure 1:
Schematic diagram of TNT-based DSSCs under back side light illumination (Inset SEM image indicates ...